N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
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DOI: 10.3390/ma15093005
Abstract: High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality N-polar GaN films were grown on a vicinal sapphire substrate with a… read more here.
Keywords: without intentional; polar gan; sapphire substrate;