First-principles study of the surface reactions of aminosilane precursors over WO3(001) during atomic layer deposition of SiO2
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DOI: 10.1039/d0ra01635g
Abstract: Atomic layer deposition (ALD) has emerged as a critical technique to deposit highly conformal and uniform thin films for advanced semiconductor devices. The development of ALD processes relies on ALD precursor design to meet the… read more here.
Keywords: surface reactions; aminosilane precursors; atomic layer; wo3 001 ... See more keywords