Revealing DRAM Operating GuardBands Through Workload-Aware Error Predictive Modeling
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DOI: 10.1109/tc.2020.3033627
Abstract: Improving the energy efficiency of DRAMs becomes very challenging due to the growing demand for storage capacity and failures induced by the manufacturing process. To protect against failures, vendors adopt conservative margins in the refresh… read more here.
Keywords: error; dram; refresh period; error behavior ... See more keywords
Time-Dependent Electromigration Modeling for Workload-Aware Design-Space Exploration in STT-MRAM
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2022.3158249
Abstract: Electromigration (EM) has been known as a reliability threatening factor for back-end-of-the-line interconnects. Spin-transfer torque magnetic RAM (STT-MRAM) is an emerging nonvolatile memory that has gained a lot of attention in recent years. However, relatively… read more here.
Keywords: time dependent; design; workload aware; stt mram ... See more keywords