Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors
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DOI: 10.3390/ma16041687
Abstract: In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (104 cycles), a… read more here.
Keywords: wox tan; artificial synaptic; resistive switching; ito wox ... See more keywords