Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses
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DOI: 10.3390/ma15248858
Abstract: In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without… read more here.
Keywords: wox taox; forming free; analog switching; tunable analog ... See more keywords