Defect Dynamics in Silicon-Doped HfO2-Based Front-End-of-Line FeFETs: Insights From Low-Frequency Noise on Doping Concentration, Interfaces, and Write Cycling
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DOI: 10.1109/ted.2025.3564270
Abstract: This article comprehensively examines the defect distribution and dynamics through low-frequency noise (LFN) characteristics in hafnium-oxide (HfO2)-based ferroelectric field-effect transistors (FeFETs). We delve into the intricate effects of varying silicon (Si) doping levels of the… read more here.
Keywords: write cycling; hfo2 based; frequency noise; silicon ... See more keywords