High write endurance up to 1012 cycles in a spin current-type magnetic memory array
Sign Up to like & getrecommendations! Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5079917
Abstract: We demonstrated high write endurance of up to 1012 cycles with a pulse write current of 10 ns in a spin current-type (SC) single magnetic tunnel junction (MTJ) element and 8×8 memory array. Furthermore, we… read more here.
Keywords: write endurance; 1012 cycles; high write; endurance 1012 ... See more keywords
Write Endurance Enhanced and Large Memory Window of GeSe-Based Selector-Only Memory With Indium Doping Scheme
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3495778
Abstract: Chalcogenide-based novel Selector-Only Memory (SOM) has attracted much attention due to its fast-speed performance and manufacturability. However, the lack of endurance, caused by the polarity operation, needs to be improved. Here, we investigate an indium… read more here.
Keywords: endurance; memory; write endurance; indium doping ... See more keywords