Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height
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DOI: 10.1063/1.4986923
Abstract: A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical… read more here.
Keywords: cofeb; write error; error; read disturb ... See more keywords