LAUSR

Electrode buffer layers producing high performance nonvolatile organic write-once-read-many-times memory devices

Sign Up to like & get
recommendations!
0 Published in 2017 at "RSC Advances"

DOI: 10.1039/c7ra00764g

Abstract: CuI and Bphen are adopted as the electrode buffer layers for a PbPc/F16CuPc heterojunction based nonvolatile organic write-once-read-many-times memory device, which improve the ON/OFF ratio up to one order of magnitude while significantly reducing the… read more here.

Keywords: buffer layers; nonvolatile organic; write read; electrode buffer ... See more keywords

Operating mechanisms of highly-reproducible write-once-read-many-times memory devices based on graphene quantum dot:poly(methyl silsesquioxane) nanocomposites

Sign Up to like & get
recommendations!
0 Published in 2017 at "Applied Physics Letters"

DOI: 10.1063/1.4973358

Abstract: Resistive switching memory devices were fabricated utilizing graphene quantum dot (GQD):poly(methyl silsesquioxane) (PMSSQ) hybrid nanocomposites. Current-voltage curves for the Al/GQD:PMSSQ/indium-tin-oxide devices at room temperature showed write-once-read-many-times memory (WORM) characteristics with an ON/OFF ratio of as… read more here.

Keywords: graphene quantum; write read; quantum dot; memory devices ... See more keywords

The trade-offs between write and read

Sign Up to like & get
recommendations!
1 Published in 2019 at "Communications of the ACM"

DOI: 10.1145/3359334

Abstract: Write Amplification vs. Read Perspiration read more here.

Keywords: write read; offs write; trade offs;