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XAFS study on the boron substituted LiGaO2 semiconductor material

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0 Published in 2020 at "Solid State Ionics"

DOI: 10.1016/j.ssi.2019.115201

Abstract: Abstract An XAFS study was performed on the electronic and crystal structure properties of LiGa1-xBxO2 (LGO) material in where boron atoms were substituted at the gallium sites. Studies were carried out by the X-ray powder… read more here.

Keywords: xafs study; boron; material; boron atoms ... See more keywords