Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg1–xCdxTe Structures
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DOI: 10.1109/ted.2018.2871270
Abstract: A simple method for computation of the electron mobility in n-type doped Hg1–xCdxTe structures is proposed. The method is based on the postulate of the existence of donor bands. In our model, the donor bands… read more here.
Keywords: mobility; xcdxte structures; type; hg1 xcdxte ... See more keywords