Effect of the Hf content on the microstructure and ferroelectric properties of HfxZr1-xO2 thin films using an all-inorganic aqueous precursor solution.
Sign Up to like & getrecommendations! Published in 2021 at "Nanoscale"
DOI: 10.1039/d1nr02667d
Abstract: The synthesis of ferroelectric HfxZr1-xO2 (0 ≤ x ≤ 0.50) thin films by chemical solution deposition (CSD) on the surface of Si (100) substrates using all-inorganic salt precursors, is demonstrated in this study. The effects… read more here.
Keywords: thin films; xo2; hfxzr1 xo2; xo2 thin ... See more keywords