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Published in 2019 at "Surfaces and Interfaces"
DOI: 10.1016/j.surfin.2019.100378
Abstract: Abstract High-vacuum XPS have been used to analyse the surface modification of a 3 nm-thick Sn thin film on Si (100) before and after annealing up to 450 °C. Increasing the XPS stage temperature led to a…
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Keywords:
xps stage;
thin film;
chemical composition;
evolution chemical ... See more keywords