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Published in 2017 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201606469
Abstract: Monolayer WxMo1−xS2-based field effect transistors are demonstrated for the first time on the monolayer WxMo1−xS2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and…
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Keywords:
wxmo1 xs2;
xs2;
monolayer wxmo1;
field effect ... See more keywords
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Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c06480
Abstract: Two-dimensional layered materials have attracted tremendous attention as photodetectors due to their fascinating features, including comprehensive coverage of band gaps, high potential in new-generation electronic devices, mechanical flexibility, and sensitive light–mass interaction. Currently, graphene and…
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Keywords:
xs2;
spectroscopy;
chemical vapor;
photodetector ... See more keywords
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Published in 2021 at "Faraday discussions"
DOI: 10.1039/c9fd00132h
Abstract: In this work, we report the synthesis and characterization of mixed phase Nb1+xS2 nanoflakes prepared by chemical vapor deposition. The as-grown samples show a high density of flakes (thickness ∼50 nm) that form a continuous…
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Keywords:
chemical vapor;
xs2;
vapor deposition;
nb1 xs2 ... See more keywords
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Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano13010024
Abstract: Layered transition metals dichalcogenides such as MoS2 and WS2 have shown a tunable bandgap, making them highly desirable for optoelectronic applications. Here, we report on one-step chemical vapor deposited MoS2, WS2 and MoxW1-xS2 heterostructures incorporated…
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Keywords:
xs2;
moxw1 xs2;
xs2 heterostructure;
mos2 ws2 ... See more keywords