Performance investigation of a novel GaAs1-xSbx-on-insulator (GASOI) FinFET: Role of interface trap charges and hetero dielectric
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DOI: 10.1016/j.mtcomm.2020.101964
Abstract: Abstract In this paper, for the first time we proposed a novel GaAs1-xSbx-on-Insulator (GASOI) FinFET on GaAS substrate using well calibrated simulation models. Impact of this novel channel material GaAs1-xSbx in FinFET performance is thoroughly… read more here.
Keywords: novel gaas1; xsbx insulator; xsbx; performance ... See more keywords