Ultralow-Resistance Contacts to Heavily Doped p-Type NbxW1–xSy Thin Films Grown by Atomic Layer Deposition
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DOI: 10.1021/acsami.4c16889
Abstract: Transition metal dichalcogenides (TMDs) are an important class of materials for future microelectronics. Of particular interest are TMDs deposited by atomic layer deposition (ALD) since this technique allows both back-end-of-line (BEOL) compatible deposition and the… read more here.
Keywords: layer; nbxw1 xsy; xsy; thin films ... See more keywords