The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures
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DOI: 10.1016/j.mssp.2019.104587
Abstract: Abstract The I-V and C-V measurements have been performed on the Al/YMn0.90Os0.10O3 (YMOO) /p-Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures between 180 K and 320 K. YMOO thin film has been grown onto p-Si wafer by radio… read more here.
Keywords: 90os0 10o3; current capacitance; temperature; value ... See more keywords