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1
Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202108469
Abstract: The design, fabrication, and characterization of wafer‐scale, zero‐bias power detectors based on 2D MoS2 field‐effect transistors (FETs) are demonstrated. The MoS2 FETs are fabricated using a wafer‐scale process on 8 μm‐thick polyimide film, which, in…
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Keywords:
mos2 field;
power;
based mos2;
wafer scale ... See more keywords
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Published in 2017 at "Journal of Superconductivity and Novel Magnetism"
DOI: 10.1007/s10948-016-3642-8
Abstract: The coherent nonlinear dynamics of Abrikosov vortices in asymmetric pinning nanolandscapes is studied by theoretical modeling and combined microwave and dc electrical resistance measurements. The problem is considered on the basis of a single-vortex Langevin…
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Keywords:
shapiro steps;
asymmetric pinning;
pinning nanolandscapes;
bias shapiro ... See more keywords
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Published in 2017 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-018-1336-0
Abstract: High frequency response is an important capability of infrared detectors in many applications. High-temperature long wavelength infrared HgCdTe heterostructure photodiodes exhibit sub-nanosecond time constants while operating under reverse bias. However, the noise, as well as…
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Keywords:
high frequency;
response;
zero bias;
bias ... See more keywords
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2
Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.3c01259
Abstract: Structural or crystal asymmetry is a necessary condition for the emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via p-n doping, which is a technologically complex process. Here, we propose…
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Keywords:
via geometric;
materials via;
bias photocurrent;
bias photodetection ... See more keywords
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Published in 2021 at "ACS nano"
DOI: 10.1021/acsnano.1c01859
Abstract: Mid-infrared absorption spectroscopy plays an important role in molecule identification and quantification for widespread applications. Integrated photonics provides opportunities to perform spectroscopic sensing on-chip for the minimization of device size, cost, and power consumption. The…
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Keywords:
absorption;
spectroscopic sensing;
long wave;
zero bias ... See more keywords
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Published in 2025 at "Scientific Reports"
DOI: 10.1038/s41598-025-98541-8
Abstract: We investigated the zero-bias conductance peak in a graphene-based ferromagnet/ferromagnet/barrier/d-wave superconductor (F/F/B/d-wave SC) heterojunction. Our research indicates that the spin-triplet pairing states induced by non-collinear magnetizations do not lead to the splitting of the zero-bias…
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Keywords:
zero bias;
conductance peak;
graphene;
spin triplet ... See more keywords
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Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0275907
Abstract: The promising applications of terahertz (THz) technology in medicine, security, and space have created a demand for further advancements in this domain. In this regard, transition metal dichalcogenides (TMDs) can prove to be excellent materials…
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Keywords:
detection;
thz;
zero bias;
thz detection ... See more keywords
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Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0297247
Abstract: As a viable alternative to the challenging fabrication of robust β-Ga2O3 p–n homojunctions, this study investigates the variable-temperature photocurrent of p-NiO/n-Ga2O3 heterojunction photodiodes under zero-bias conditions. The device's built-in electric field is utilized to achieve…
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Keywords:
field;
nio ga2o3;
electric field;
zero bias ... See more keywords
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Published in 2020 at "Journal of Consumer Research"
DOI: 10.1093/jcr/ucaa035
Abstract: Using a sample of individuals who hold target retirement funds (TRFs), we examine how people use arithmetic to estimate their retirement age. We find a robust “zero” bias where investors have a strong preference for…
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Keywords:
retirement;
target retirement;
zero bias;
bias ... See more keywords
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Published in 2025 at "Physical Review B"
DOI: 10.1103/hl4g-9frn
Abstract: We formulate a scattering theory of the proximity effect in a weakly disordered SININ junction (S = superconductor, I = insulating barrier, N = normal metal). This allows to relate the conductance and density of…
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Keywords:
barrier normal;
times splitting;
junction;
zero bias ... See more keywords
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Published in 2017 at "Physical Review B"
DOI: 10.1103/physrevb.96.184520
Abstract: A one-dimensional semiconductor nanowire proximitized by a nearby superconductor may become a topological superconductor hosting localized Majorana zero modes at the two wire ends in the presence of spin-orbit coupling and Zeeman spin splitting (arising…
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Keywords:
dependence;
temperature;
bias conductance;
tunnel ... See more keywords