Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors
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DOI: 10.1109/led.2020.2967773
Abstract: This work experimentally demonstrates the memory operations of a $\text{Z}^{{2}}$ -FET (Zero impact ionization, Zero subthreshold swing) matrix without the use of selectors. Selection and deselection of memory cells in the same bit line can… read more here.
Keywords: memory operations; zero subthreshold; ionization zero; subthreshold swing ... See more keywords