Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer.
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DOI: 10.1039/c7nr02099f
Abstract: Efficient inverted quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated by using 15% Mg doped ZnO (Zn0.85Mg0.15O) as an interfacial modification layer. By doping Mg into ZnO, the conduction band level, the density of oxygen vacancies… read more here.
Keywords: interfacial modification; modification layer; zn0 85mg0; 85mg0 15o ... See more keywords