Fabrication and characterization of ultraviolet detector based on epitaxial Ta-doped Zn2SnO4 films
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DOI: 10.1016/j.optmat.2020.110224
Abstract: Abstract Zn2SnO4 films with Ta concentrations from 0 to 5% were deposited on MgO(100) substrates via pulsed laser deposition, and annealed in air atmosphere at 800 °C. The structure, surface morphology, optical and electrical properties of… read more here.
Keywords: doped zn2sno4; ultraviolet detector; zn2sno4 films; zn2sno4 ... See more keywords