Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell
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DOI: 10.1039/c8ra03181a
Abstract: We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics… read more here.
Keywords: resistive random; random access; zn2tio4 resistive; access memory ... See more keywords