Ferroelectric Optoelectronic Memory Based on p-GaN/ZnGa2O4/BaTiO3/n-ITO Heterojunction with Integrated Sensing and Logic Operations.
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DOI: 10.1021/acsami.4c19505
Abstract: Ferroelectric optoelectronic memories, capable of integrating sensing, computing, and storage functionalities, hold significant potential in the fields of artificial intelligence and the Internet of Things. In this study, a nonvolatile p-GaN/ZnGa2O4/BaTiO3/n-ITO ferroelectric optoelectronic memory is… read more here.
Keywords: memory; znga2o4 batio3; ferroelectric optoelectronic; optoelectronic memory ... See more keywords