The Pb(Zr0.2,Ti0.8)O3/ZnO/GaN Ferroelectric–Semiconductor Heterostructure: Insight into the Interfacial Energy Level Alignments
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DOI: 10.1002/admi.202000201
Abstract: Ferroelectric/semiconductor heterostructures promise to be the backbone of next‐generation “green” data storage devices combining ultrashort switching times and ultralow switching power with a simplified device structure and low‐cost processing. One promising candidate to realize such… read more here.
Keywords: energy level; zno; zr0 ti0; semiconductor ... See more keywords
Thermal Boundary Conductance Across Heteroepitaxial ZnO/GaN Interfaces: Assessment of the Phonon Gas Model.
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DOI: 10.1021/acs.nanolett.8b02837
Abstract: We present experimental measurements of the thermal boundary conductance (TBC) from 78-500 K across isolated heteroepitaxially grown ZnO films on GaN substrates. This data provides an assessment of the underlying assumptions driving phonon gas-based models,… read more here.
Keywords: boundary conductance; zno; thermal boundary; phonon ... See more keywords
Bandgap bowing in crystalline (ZnO)1−x (GaN) x thin films; influence of composition and structural properties
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DOI: 10.1088/1361-6641/aaee4a
Abstract: Thin films of (ZnO)1−x (GaN) x with an optical bandgap between 3.3 and ~2.4 eV at room temperature for 0 ≤ x ≤ 0.2 have been grown by magnetron sputtering on (0001)-sapphire substrates. A strong… read more here.
Keywords: bandgap; thin films; zno; bandgap bowing ... See more keywords
Specific Features of the Luminescence of ZnO:Te/GaN/Al2O3 Heterostructures
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DOI: 10.1134/s1063785018120398
Abstract: High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al2O3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin… read more here.
Keywords: gan al2o3; luminescence zno; features luminescence; zno gan ... See more keywords