Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer.
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DOI: 10.1021/acsami.2c03451
Abstract: The present study pioneered an oxygen migration-driven metal to insulator transition Mott memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first show the reset first bipolar property without an initial… read more here.
Keywords: zno interlayer; lto; oxygen migration; zno ... See more keywords