Characteristics of the bipolar resistive switching behavior in memory device with Au/ZnO/ITO structure
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DOI: 10.1016/j.cjph.2018.10.019
Abstract: Abstract In this work, reproducible and stable bipolar resistive switching behavior without the requirement of forming process is observed in the memory device with Au/ZnO/ITO structure. It shows a high Ron/Roff ratio, where Ron and… read more here.
Keywords: memory; switching behavior; zno ito; resistive switching ... See more keywords