Direct Observation of Photoexcited Localized Energy States of Atomically Deposited ZnO Transistors by Analyzing Transfer Characteristics
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DOI: 10.1021/acsomega.4c09462
Abstract: Zinc oxide (ZnO) thin-film transistors (TFTs) can be promising for applications in wide-band light absorption. However, they suffer from retarded photoresponse characteristics due to atomic defects and the resulting localized electronic states. To investigate the… read more here.
Keywords: direct observation; observation photoexcited; localized energy; photoexcited localized ... See more keywords
Improving the Performance of Ultrathin ZnO TFTs Using High-Pressure Hydrogen Annealing
Sign Up to like & getrecommendations! Published in 2025 at "Nanomaterials"
DOI: 10.3390/nano15191484
Abstract: Ultrathin oxide semiconductors are promising channel materials for next-generation thin-film transistors (TFTs), but their performance is severely limited by bulk and interface defects as the channel thickness approaches a few nanometers. In this study, we… read more here.
Keywords: pressure hydrogen; hydrogen annealing; zno tfts; performance ... See more keywords