Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c24880
Abstract: Zinc oxynitride (ZnON) has the potential to overcome the performance and stability limitations of current amorphous oxide semiconductors because ZnON-based thin-film transistors (TFTs) have a high field-effect mobility of 50 cm2/Vs and exceptional stability under… read more here.
Keywords: bilayer structure; znon; air; stability ... See more keywords
Effects of Fluorine Doping on the Electrical Performance of ZnON Thin-Film Transistors.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b03385
Abstract: In this work, the effects of fluorine incorporation in high mobility zinc oxynitride (ZnON) semiconductor are studied by both theoretical calculations and experimental evaluation of thin film transistors (TFTs). From density functional theory (DFT) calculations,… read more here.
Keywords: thin film; fluorine doping; znon; effects fluorine ... See more keywords
DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures
Sign Up to like & getrecommendations! Published in 2024 at "Materials Research Express"
DOI: 10.1088/2053-1591/ad1e0f
Abstract: Zinc oxynitride (ZnON) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnON films with varying elemental… read more here.
Keywords: znon; structure; reactive sputtering; gap ... See more keywords