Growth and characterization of ZnTe single crystal via a novel Te flux vertical Bridgman method
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DOI: 10.1007/s12598-020-01601-3
Abstract: In this work, an II–VI group semiconductor zinc telluride (ZnTe) single crystal is prepared by a novel vertical Bridgman method using Te as flux. The initial mole ratio of Zn/Te = 3:7 is designed for raw material… read more here.
Keywords: vertical bridgman; bridgman method; znte; znte single ... See more keywords