Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
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DOI: 10.1063/1.4983024
Abstract: In this paper, we present new insight in the degradation and subsequent recovery of charge carrier lifetime upon light soaking at 75 °C observed in float-zone silicon wafers. Variations of doping type, dielectric passivation schemes and… read more here.
Keywords: degradation; silicon; float zone; bulk defects ... See more keywords
Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiNx:H
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2017.2649601
Abstract: In this study, it is observed that boron-doped float-zone silicon coated with hydrogenated silicon nitride shows strong instabilities in effective minority carrier lifetime after a fast firing step and subsequent treatment at elevated temperatures and… read more here.
Keywords: boron doped; doped float; silicon; float zone ... See more keywords