Articles with "zr0 ti0" as a keyword



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The Pb(Zr0.2,Ti0.8)O3/ZnO/GaN Ferroelectric–Semiconductor Heterostructure: Insight into the Interfacial Energy Level Alignments

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Published in 2020 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202000201

Abstract: Ferroelectric/semiconductor heterostructures promise to be the backbone of next‐generation “green” data storage devices combining ultrashort switching times and ultralow switching power with a simplified device structure and low‐cost processing. One promising candidate to realize such… read more here.

Keywords: energy level; zno; zr0 ti0; semiconductor ... See more keywords

Design of a Self-Powered System by Wind-Driven Triboelectric Nanogenerator Based on 0.94(Bi0.5 Na0.5 )TiO3 -0.06Ba(Zr0.25 Ti0.75 )O3 /Polyvinylidene Fluoride (BNT-BZT/PVDF) Composites.

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Published in 2022 at "Small"

DOI: 10.1002/smll.202202792

Abstract: The portable power bank as an energy storage device has received tremendous attention while the limited capacity and periodical charging are critical issues. Here, a self-charging power system (SCPS) consisting of a 0.94(Bi0.5 Na0.5 )TiO3… read more here.

Keywords: 06ba zr0; bnt bzt; zr0 ti0; tio3 06ba ... See more keywords
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Demonstration of ultra-high recyclable energy densities in domain-engineered ferroelectric films

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Published in 2017 at "Nature Communications"

DOI: 10.1038/s41467-017-02040-y

Abstract: Dielectric capacitors have the highest charge/discharge speed among all electrical energy devices, but lag behind in energy density. Here we report dielectric ultracapacitors based on ferroelectric films of Ba(Zr0.2,Ti0.8)O3 which display high-energy densities (up to… read more here.

Keywords: energy densities; energy; recyclable energy; zr0 ti0 ... See more keywords
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Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

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Published in 2017 at "Functional Materials Letters"

DOI: 10.1142/s1793604717500369

Abstract: Ferroelectric Pb(Zr0.52,Ti0.48)O3(PZT) thin film was grown on n-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy… read more here.

Keywords: ferroelectric zr0; laser molecular; molecular beam; zr0 ti0 ... See more keywords