Enhanced memory properties of HfO2-based ferroelectric capacitor by inserting Al2O3/ZrO2 stack interfacial layer
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0138158
Abstract: HfO2-based ferroelectrics have been regarded as a promising material to integrate into a gate stack of silicon-based field-effect-transistors (FETs). However, a narrower memory window (MW) and poor endurance caused by an undesirable interfacial layer (IL)… read more here.
Keywords: hfo2 based; zro2 stack; stack; memory ... See more keywords