Effect of sputtering atmosphere on the characteristics of ZrOx resistive switching memory
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DOI: 10.1088/1361-6641/aa637a
Abstract: A ZrOx switching layer with different oxygen content for TiN/ZrOx/Pt resistive switching (RS) memory was prepared by magnetron sputtering in different atmospheres such as N2/Ar mixture, O2/Ar mixture as well as pure Ar. The morphology,… read more here.
Keywords: sputtering atmosphere; memory; zrox resistive; zrox ... See more keywords