Atomic Layer Deposited ZrxAl1−xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor
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DOI: 10.1007/s13391-018-0079-1
Abstract: In this work, the high κ ZrxAl1−xOy films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric… read more here.
Keywords: zrxal1 xoy; gate insulator; film; layer ... See more keywords