LAUSR

Abstract The effect of the TiO2 nanotube phase and the Pt contact morphology on their Schottky junction is studied. Different annealing temperatures were used to achieve different phases. Titanium dioxide nanotube has an anatase phase when annealed at 450°C and a mixed-phase of anatase and rutile when annealed at 550°C. The platinum contact was deposited using the atomic layer deposition method. Different morphologies can be achieved with a varying number of coating cycles. We found that the rectification ratio of a sample with mixed-phase TiO2 nanotubes is higher than that of a sample with anatase phase TiO2 nanotubes. The rectification ratio of a device with a continuous thin film morphology contact is higher than those with a noncontinuous morphology. The highest average rectification ratio of 831 is achieved with a continuous thin film Pt coating over mixed-phase TiO2 nanotubes device.