Influence of oblique magnetic field on the impact ionization rate of charge carriers in semiconductors
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-017-1014-7
Abstract: In this paper, an analytical model has been presented to study the influence of magnetic field on the impact ionization rate of charge carriers in semiconductors. The magnetic field is supposed to be applied along… read more here.
Keywords: rate charge; field; ionization rate; magnetic field ... See more keywords
The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface.
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DOI: 10.1021/acsnano.8b05217
Abstract: This paper describes experiments that are designed to test the influence of terminal groups incorporating carbon-halogen bonds on the current density (by hole tunneling) across self-assembled monolayer (SAM)-based junctions of the form MTS/S(CH2)9NHCOCH nX3- n//Ga2O3/EGaIn… read more here.
Keywords: rate charge; assembled monolayer; self assembled; halogen ... See more keywords