GIDL analysis of the process variation effect in gate-all-around nanowire FET
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.10.017
Abstract: Abstract In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to… read more here.
Keywords: nanowire fet; fet; gate; effect ... See more keywords
Nanowire FET With Corner Spacer for High-Performance, Energy-Efficient Applications
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2764511
Abstract: Parasitic capacitance in nanoscale FETs is becoming a dominant component of the total device capacitance which degrades device and circuit performance. This problem is exacerbated with the introduction of multigate FETs such as FinFET and… read more here.
Keywords: spacer; nanowire fet; corner spacer; performance ... See more keywords